Electron microscopy of a transmon device reveals 7-20 nm oxide layers and carbon contamination at air-exposed interfaces, a cleaner metal-substrate interface, and suggests these imperfections drive dielectric loss.
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Characterization of Nanostructural Imperfections in Superconducting Quantum Circuits
Electron microscopy of a transmon device reveals 7-20 nm oxide layers and carbon contamination at air-exposed interfaces, a cleaner metal-substrate interface, and suggests these imperfections drive dielectric loss.