SEM orientation contrast enables direct imaging of anti-phase domains in zinc-blende III-V materials, quantified on GaP/GaAs and applied qualitatively to other substrates with image processing revealing preferential boundaries in GaP/Si.
Piriyev et al., Dual bandgap operation of a GaAs/Si photoelectrode, Sol
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Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy
SEM orientation contrast enables direct imaging of anti-phase domains in zinc-blende III-V materials, quantified on GaP/GaAs and applied qualitatively to other substrates with image processing revealing preferential boundaries in GaP/Si.