Dissipation peaks observed via AFM on the STO 2DEG follow Kohler's rule under magnetic fields, enabling extraction of sub-band-specific carrier mobilities through quantum capacitance variations.
Ohtomo \ and\ author H
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
citation-role summary
baseline 1
citation-polarity summary
verdicts
UNVERDICTED 2roles
baseline 1polarities
baseline 1representative citing papers
Gate-tunable analog memcapacitance is demonstrated in LaAlO3/SrTiO3 interface devices, originating from lateral floating gate charge localization with a supporting model.
citing papers explorer
-
Mechanical detection of sub-band mobilities of two-dimensional electron gas on reduced SrTiO$_3$(001) surface
Dissipation peaks observed via AFM on the STO 2DEG follow Kohler's rule under magnetic fields, enabling extraction of sub-band-specific carrier mobilities through quantum capacitance variations.
-
Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices
Gate-tunable analog memcapacitance is demonstrated in LaAlO3/SrTiO3 interface devices, originating from lateral floating gate charge localization with a supporting model.