LPCVD-grown tin-doped (010) beta-Ga2O3 films show record electron mobility for this growth method while keeping high growth rates and good crystal quality.
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Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films
LPCVD-grown tin-doped (010) beta-Ga2O3 films show record electron mobility for this growth method while keeping high growth rates and good crystal quality.