Low-frequency noise measurements on MIS and MIOS SiN RRAMs are used to argue that multilevel switching comes from nitrogen-vacancy density changes, although the paper's own model predicts a different noise scaling.
Logic-in-memory application of CMOS compatible silicon nitride memristor,
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The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
Low-frequency noise measurements on MIS and MIOS SiN RRAMs are used to argue that multilevel switching comes from nitrogen-vacancy density changes, although the paper's own model predicts a different noise scaling.