The high silicon flux observed when doping beta-Ga2O3 by plasma-assisted MBE comes from volatile SiO produced by oxidation of the silicon source, not from silicon's own vapor pressure.
and Rajan, S., IEEE Electron Device Letters, 39(4), pp.568-571
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Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
The high silicon flux observed when doping beta-Ga2O3 by plasma-assisted MBE comes from volatile SiO produced by oxidation of the silicon source, not from silicon's own vapor pressure.