Symmetry-adapted analysis of screw dislocations in GaN identifies band-connectivity constraints, dipole selection rules, and a core piezoelectric effect that suppresses radiative recombination in favor of non-radiative capture.
Monemar, Fundamental energy gap of gan from pho- toluminescence excitation spectra, Physical Review B10, 676 (1974)
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Symmetry Adapted Analysis of Screw Dislocation: Electronic Structure and Carrier Recombination Mechanisms in GaN
Symmetry-adapted analysis of screw dislocations in GaN identifies band-connectivity constraints, dipole selection rules, and a core piezoelectric effect that suppresses radiative recombination in favor of non-radiative capture.