This review consolidates the drift-diffusion and Shockley-Read-Hall equations needed to model band-edge-property variations and localized defect states in solar cells, as used in the AMPS simulation code and its derivatives.
Microcrystalline n-i-p tunnel junction in a-Si:H/a-Si:H tandem cells
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Addressing band-edge-property spatial variations and localized-state carrier trapping and recombination in solar cell numerical modeling
This review consolidates the drift-diffusion and Shockley-Read-Hall equations needed to model band-edge-property variations and localized defect states in solar cells, as used in the AMPS simulation code and its derivatives.