Epitaxial planar hexagonal Ge forms on m-plane CdS by LEPECVD at ~250 °C, with Raman E2g selection rules and rapid near-interface strain relief, but hexagonal order collapses beyond ~6–12 nm via I3 stacking faults and no Ge photoluminescence is seen.
Supplemental material Growth and characterization of planar hexagonal Ge on CdS (a) (b) (c) (d) 500 nm 500 nm 5 μm 5μm III IV CdS CdS FIG
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Growth and characterization of planar hexagonal Ge on CdS
Epitaxial planar hexagonal Ge forms on m-plane CdS by LEPECVD at ~250 °C, with Raman E2g selection rules and rapid near-interface strain relief, but hexagonal order collapses beyond ~6–12 nm via I3 stacking faults and no Ge photoluminescence is seen.