Ultrathin 0.2 nm Ta seed layers deposited under oxygen-poor conditions optimize MoS2 transistor performance by limiting disorder while enabling effective charge transfer doping from the HfOx dielectric.
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Seed Layer Engineering for Effective Charge Transfer Doping of MoS$_2$ Transistors
Ultrathin 0.2 nm Ta seed layers deposited under oxygen-poor conditions optimize MoS2 transistor performance by limiting disorder while enabling effective charge transfer doping from the HfOx dielectric.