A new process of edge ion implantation followed by microwave annealing reduces leakage current at the sensor edges and shows promise for simpler active edge silicon detectors.
Batignani et al.,DOUBLE SIDE READOUT SILICON STRIP DETECTORS FOR THE ALEPH MINIVERTEX, in3rd Topical Seminar on Perspectives for Experimental Apparatus, 6
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Active Edge Silicon Sensors Fabricated With Edge Ion Implantation and Microwave Annealing for Dopant Activation
A new process of edge ion implantation followed by microwave annealing reduces leakage current at the sensor edges and shows promise for simpler active edge silicon detectors.