Ge-doped (-201) β-Ga₂O₃ on 6° offcut c-sapphire by LPCVD delivers record 117 cm²/V·s RT mobility (337 at 128 K) among Ge-doped films on sapphire, with transport fits giving shallow donors ~12–19 meV and Ndis ~10⁹ cm⁻².
A.; Pandey, R.; Amzallag, E.; Baraille, I.; Rérat, M
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High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition
Ge-doped (-201) β-Ga₂O₃ on 6° offcut c-sapphire by LPCVD delivers record 117 cm²/V·s RT mobility (337 at 128 K) among Ge-doped films on sapphire, with transport fits giving shallow donors ~12–19 meV and Ndis ~10⁹ cm⁻².