LDE-grown InGaAs QDs in InAlAs show narrow 0.2 meV lines, g2(0) of 0.07 under CW excitation, and single-photon emission persisting to liquid-nitrogen temperatures.
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Local droplet etching-assisted quantum dot epitaxy for telecom C-band quantum light emitters
LDE-grown InGaAs QDs in InAlAs show narrow 0.2 meV lines, g2(0) of 0.07 under CW excitation, and single-photon emission persisting to liquid-nitrogen temperatures.