Characterization of the optical response from variant InGaN nanowires emitting within the green spectral gap

This study provides a comprehensive physical and optical investigation of InGaN nanowires (NWs) designed to address the challenges posed by the green gap region. We conduct a detailed analysis of the morphology, structure, and optical characteristics of the NWs using characterization techniques such as scanning electron microscopy, cathodoluminescence spectroscopy, and confocal scanning microscopy. Notably, increasing the indium concentration causes a redshift in emission and alters the luminescence properties across different segments of NWs. Our findings provide valuable insight into the correlation between indium compositional nonuniformity and the optical emission properties of NWs. These insights contribute to optimizing the growth condition, color accuracy, and enhancing optical efficiency of NWs, highlighting their potential for next generation high-performance LEDs and optoelectronics devices.