Simulations show that ferroelectric domain walls in BaTiO3 are pinned by acceptor defect dipoles through short-range, anisotropic interactions, so defect-free areas, not just defect density, control wall motion.
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Control of ferroelectric domain wall dynamics by point defects: Insights from ab initio based simulations
Simulations show that ferroelectric domain walls in BaTiO3 are pinned by acceptor defect dipoles through short-range, anisotropic interactions, so defect-free areas, not just defect density, control wall motion.