Quasi-resonant laser excitation at specific energies boosts GaN defect emitter photoluminescence intensity by up to an order of magnitude with polarization selectivity, consistent with localized vibrational modes of point-defect complexes.
Fingerprints of Carbon Defects in Vibrational Spectra of GaN Considering the Isotope Effect
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Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters
Quasi-resonant laser excitation at specific energies boosts GaN defect emitter photoluminescence intensity by up to an order of magnitude with polarization selectivity, consistent with localized vibrational modes of point-defect complexes.