GaOx hole transport layer formed by ion exchange during CuInSe2 deposition enables 16% efficient 1.0 eV cells with 552 mV VOC without Ag or heavy alkalis.
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What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?
GaOx hole transport layer formed by ion exchange during CuInSe2 deposition enables 16% efficient 1.0 eV cells with 552 mV VOC without Ag or heavy alkalis.