A back-to-back MOSFET control circuit for IRSs in high-power WPT maintains ~180° reflection phase difference and stable operation up to 1.25 W per cell, validated via transmission-line model and nonlinear SPICE co-simulations.
A., Homma, H., Sugiura, S
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Numerical Validation of a MOSFET-Based Control Circuit for High-Power Intelligent Reflecting Surfaces for Wireless Power Transfer Applications
A back-to-back MOSFET control circuit for IRSs in high-power WPT maintains ~180° reflection phase difference and stable operation up to 1.25 W per cell, validated via transmission-line model and nonlinear SPICE co-simulations.