A thin SiO2 cap modifies the surface chemistry of reactive or non-selective masks to achieve SiO2-like selectivity in III-V MBE without degrading optical response.
Ironside and Alec M
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Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials
A thin SiO2 cap modifies the surface chemistry of reactive or non-selective masks to achieve SiO2-like selectivity in III-V MBE without degrading optical response.