pith. sign in

Inside the well, a piecewise-constant Si profile,s, reshapes the out-of-plane confinement poten- tial and, consequently, theHH/LHvalence-band edges

Modeling the out-of-plane subbands We consider a compressively strained Ge QW of thicknessL z, grown along[001]≡ˆzand embedded between relaxed Si0

1 Pith paper cite this work. Polarity classification is still indexing.

1 Pith paper citing it
browse 1 citing papers

fields

cond-mat.mes-hall 1

years

2026 1

verdicts

UNVERDICTED 1

representative citing papers

g-tensor Optimization in Ge/SiGe Quantum Dots

cond-mat.mes-hall · 2026-04-30 · unverdicted · novelty 4.0

A flexible optimization framework is introduced to suppress in-plane g-tensor components in SiGe-Ge-SiGe quantum wells by tuning silicon concentration, enabling gapless single-spin qubit encoding.

citing papers explorer

Showing 1 of 1 citing paper.

  • g-tensor Optimization in Ge/SiGe Quantum Dots cond-mat.mes-hall · 2026-04-30 · unverdicted · none · ref 8

    A flexible optimization framework is introduced to suppress in-plane g-tensor components in SiGe-Ge-SiGe quantum wells by tuning silicon concentration, enabling gapless single-spin qubit encoding.