Measurements and Boltzmann transport simulations indicate that SiGeSn alloys reach thermoelectric ZT above 1 at 300 to 400 K, a promising CMOS-compatible room-temperature thermoelectric.
Advanced Functional Materials , volume =
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices
Measurements and Boltzmann transport simulations indicate that SiGeSn alloys reach thermoelectric ZT above 1 at 300 to 400 K, a promising CMOS-compatible room-temperature thermoelectric.