Reactive magnetron sputtering from liquid Ga produces oriented beta-Ga2O3 films on sapphire with minimum resistivity 7x10^3 ohm.cm at 585C.
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Crystalline b-Ga2O3 thin films deposited via reactive magnetron sputtering of a liquid Ga target
Reactive magnetron sputtering from liquid Ga produces oriented beta-Ga2O3 films on sapphire with minimum resistivity 7x10^3 ohm.cm at 585C.