Irradiation-induced disorder in monolayer graphene shifts conductivity from weak localization to variable-range hopping, with magnetoresistance sign depending on field orientation.
Measurements of MR in samples 2–4 were performed at temperatures down to 1.8 K and in magnetic fields up to B = 8 T in perpendicular B⊥ and in-plane(parallel) B∥ geometry
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Irradiation-induced metal-insulator transition in monolayer graphene
Irradiation-induced disorder in monolayer graphene shifts conductivity from weak localization to variable-range hopping, with magnetoresistance sign depending on field orientation.