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PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
ref [14] · 2506.11754 · notice #8837 · dispute
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M. Sobanska, Z.R. Zytkiewicz, G. Calabrese, L. Geelhaar, S. Fernández -Garrido, Comprehensive analysis of the self -assembled formation of GaN nanowires on am orphous AlxOy: in situ quadrupole mass spectrometry studies, Nanotechnology 30 (2019) 154002. https://doi.org/10.1088/1361-6528/aafe17