Citation notice #10127 · 2026-08-14 18:18:45.538961+00:00

Low temperature growth and optical properties of {\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Correction Crossref Open

cites 10.1039/c4ta05007j, which carries a correction notice dated 2014-12-02. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.

This is not a judgment on the citing paper.

Citing paper Event page Original DOI Notice DOI File a formal challenge All reference changes

01Evidence

Raw extraction · bibliography line · bibliography index 33

Ramachandran, R. K. et al. Plasma enhanced atomic layer deposition of Ga2O3thin films. J. Mater. Chem. A (2014). doi:10.1039/c4ta05007j

02Event

Type: Correction
Source: Crossref
Original DOI: 10.1039/c4ta05007j
Notice DOI: 10.1039/c4ta90219j
Date: 2014-12-02
Title: Correction: Plasma enhanced atomic layer deposition of Ga <sub>2</sub> O <sub>3</sub> thin films
Reasons: ['Correction']
Work: - (2014)

Schema constants (for re-runners): correction · crossref

03Dispute this notice

If this citation does not depend on the flagged claim, or the event is wrong, say so. Disputes are public. For a signed challenge against the paper itself, use the formal challenge form.