Citation notice #10143 · 2026-08-14 18:18:46.083003+00:00

Low temperature growth and optical properties of {\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Correction Crossref Open

cites 10.1063/1.4985855, which carries a correction notice dated 2018-10-03. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.

This is not a judgment on the citing paper.

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01Evidence

Raw extraction · bibliography line · bibliography index 1

Ghose, S. et al. Growth and characterization of β-Ga2O3thin films by molecular beam epitaxy for deep- UV photodetectors. J. Appl. Phys. (2017). doi:10.1063/1.4985855

02Event

Type: Correction
Source: Crossref
Original DOI: 10.1063/1.4985855
Notice DOI: 10.1063/1.5051998
Date: 2018-10-03
Title: Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]
Reasons: ['Correction']
Work: - (2017)

Schema constants (for re-runners): correction · crossref

03Dispute this notice

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