Citation notice #2918 · 2026-07-11 03:19:00.507490+00:00
Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Correction
Crossref
Open
cites URL https: //doi.org/10.1038/s41467-023-36951-w, which carries a correction notice dated 2023-04-06. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.
Citing paper Event page Original DOI Notice DOI File a formal challenge All reference changes
01Evidence
Raw extraction · bibliography line · bibliography index 24
Paquelet Wuetz, B.et al.Reducing charge noise in quantum dots by using thin silicon quantum wells.Nature Communications14, 1385 (2023). URL https: //doi.org/10.1038/s41467-023-36951-w
02Event
- Type
- Correction
- Source
- Crossref
- Original DOI
- 10.1038/s41467-023-36951-w
- Notice DOI
- 10.1038/s41467-023-37548-z
- Date
- 2023-04-06
- Title
- Author Correction: Reducing charge noise in quantum dots by using thin silicon quantum wells
- Reasons
- ['Correction']
- Work
- URL https: //doi.org/10.1038/s41467-023-36951-w (2023)
03Dispute this notice
If this citation does not depend on the flagged claim, or the event is wrong, say so. Disputes are public. For a signed challenge against the paper itself, use the formal challenge form.