Citation notice #8644 · 2026-08-06 06:17:46.189036+00:00

Design and Control of an Actively Morphing Quadrotor with Vertically Foldable Arms

cites 10.1063/1.1577406, which carries a correction notice dated 2012-01-19. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.

This is not a judgment on the citing paper.

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01Evidence

Raw extraction · citation context · bibliography index 25

Sankeshwar, Phonon-limited electron mobility in III-nitride hetero- junctions, Diamond Relat. Mater. 49 (2014) 87. doi:10.1016/j.diamond.2014.08. 005. [25] R. P. Joshi, V. Sridhara, B. Jogai, P. Shah, R. D. del Rosario, Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors, J. Appl. Phys. 93 (2003) 10046. doi:10.1063/1.1577406. [26] B. Y.-K. Hu, S. D. Sarma, Many-body exchange-correlation effects in the lowest sub- band of semiconductor quantum wires, Phys. Rev. B 48 (1993) 5469. doi:10.1103/ PhysRevB.48.5469. [27] B. Scharf, A. Matos-Abiague, Coulomb drag between massless and massive fermions, Phys. Rev. B 86 (2012) 115425. doi:10.1103/PhysRevB.86.115425. [28] R. A. Jishi, Feynman diagram techniques in condensed matter physics, Springer, 2013.

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Sankeshwar, Phonon-limited electron mobility in III-nitride hetero- junctions, Diamond Relat. Mater. 49 (2014) 87. doi:10.1016/j.diamond.2014.08. 005. [25] R. P. Joshi, V. Sridhara, B. Jogai, P. Shah, R. D. del Rosario, Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors, J. Appl. Phys. 93 (2003) 10046. doi:10.1063/1.1577406. [26] B. Y.-K. Hu, S. D. Sarma, Many-body exchange-correlation effects in the lowest sub- band of semiconductor quantum wires, Phys. Rev. B 48 (1993) 5469. doi:10.1103/ PhysRevB.48.5469. [27] B. Scharf, A. Matos-Abiague, Coulomb drag between massless and massive fermions, Phys. Rev. B 86 (2012) 115425. doi:10.1103/PhysRevB.86.115425. [28] R. A. Jishi, Feynman diagram techniques in condensed matter physics, Springer, 2013

02Event

Type

Correction

Source

Crossref

Original DOI

10.1063/1.1577406

Notice DOI

10.1063/1.3679426

Date

2012-01-19

Title

Publisher’s Note: “Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors” [J. Appl. Phys. 93, 10046 (2003)]

Reasons

['Correction']

Work

- (2003)

Schema constants (for re-runners): correction · crossref

03Dispute this notice

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