Irradiation of DEPFET-like transistors with Co-60 gamma source up to 10 MRad

Eliseo P\'erez Trigo; Pablo Rodr\'iguez P\'erez; Pablo V\'azquez Regueiro

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Irradiation of DEPFET-like transistors with Co-60 gamma source up to 10 MRad

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arxiv 1110.6222 v2 pith:OFQTNF6D submitted 2011-10-28 physics.ins-det hep-ex

Pablo Vázquez Regueiro , Eliseo Pérez Trigo , Pablo Rodríguez Pérez This is my paper · ORCID

classification physics.ins-dethep-ex

keywords depfetgammamradsourcetechnologywereacceleratorbelle

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The Pixel Detector (PXD) of the Belle II experiment at superKEKB accelerator in Japan is based in the DEPFET technology. Two layers of 8+12 modules at a radius of 13 and 22 mm will give a spatial resolution below 10 mm. The radiation level expected in the first layer in ten years of operation is about 10 MRad of total ionizing dose. In order to study the tolerance of the DEPFET technology sixty devices were irradiated using a standard procedure like 60Co gamma source. Different doping types, channel sizes and biasing conditions were studied

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