Solar Transition-Region Lines Observed by the Interface Region Imaging Spectrograph: Diagnostics for the O IV and Si IV Lines

The formation of the transition-region O IV and Si IV lines observable by the Interface Region Imaging Spectrograph (IRIS) is investigated for both Maxwellian and non-Maxellian conditions characterized by a kappa-distribution exhibiting a high-energy tail. The \ion{Si}{4} lines are formed at lower temperatures than the O IV lines for all kappa. In non-Maxwellian situations with lower kappa, the contribution functions are shifted to lower temperatures. Combined with the slope of the differential emission measure, it is possible for the Si IV lines to be formed at very different regions of solar transition region than the O IV lines; possibly close to solar chromosphere. Such situations might be discernible by IRIS. It is found that photoexcitation can be important for the Si IV lines, but is negligible for the O IV lines. The usefulness of the O IV ratios for density diagnostics independently of kappa is investigated and it is found that the O IV 1404.78A /1399.77A ratio provides a good density diagnostics except for very low T combined with extreme non-Maxwellian situations.