Dual-polarization light emission from InAs quantum dots in a annular photonic crystal cavity

The annular photonic crystals have been regarded as a satisfactory candidate to realize dual-polarization photonic device. In this letter, we focus our attention on the study of annular photonic crystal cavity to verify its application in light emission. We proposed a two-dimensional photonic crystal model with annular air units and a point-line defect to construct a cavity for the enhancement of light emission of InAs quantum dots. With the help of global optimization method, we have obtained an annular photonic crystal cavity design which can show a high in-plane quality factor of about 1.3*105 and 2.8*106 for transverse electric and transverse magnetic polarizations, respectively. Based on the Electron Beam Lithography and Reactive Ion Etching techniques, such cavity pattern was transferred into the top of InAs/GaAs active layer. The photoluminescence spectra of sample demonstrated clear light emission at around 1.3 um for both polarizations. Such dual-polarization light emitter has potential applications in optical communications, quantum information processing and other relative areas.