Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

Antonio Miucci; Armin Fehr; Claudia Merlassino; Dean Forshaw; Didier Ferrere; D M S Sultan; Ettore Zaffaroni; Eva Vilella; Francesco Armando Di Bello; Francesco Lanni

arxiv: 1807.09553 · v1 · pith:N6I62YTSnew · submitted 2018-07-25 · ⚛️ physics.ins-det

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

John Anders , Mathieu Benoit , Saverio Braccini , Raimon Casanova , Hucheng Chen , Kai Chen , Francesco Armando Di Bello , Armin Fehr

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Didier Ferrere Dean Forshaw Tobias Golling Sergio Gonzalez-Sevilla Giuseppe Iacobucci Moritz Kiehn Francesco Lanni Hongbin Liu Lingxin Meng Claudia Merlassino Antonio Miucci Marzio Nessi Ivan Peri\'c Marco Rimoldi D M S Sultan Mateus Vincente Barreto Pinto Eva Vilella Michele Weber Weihao Wu Lailin Xu Ettore Zaffaroni

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keywords protoncharacterisationchargecmoscollectioncurrentirradiationtechnique

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This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

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