A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel

In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using a new low temperature (LT) pulsed metal-organic chemical vapor deposition (PMOCVD) doping scheme for the n++-GaN regrown contacts and an AlxGa1-xN digital alloy (DA) channel layer comprising short period super lattices (SPSL) of AlN and GaN. Pulsed growth and doping yield a sheet resistivity which is a factor of 3-5 lower than that of conventional doped n++-GaN layers grown under identical conditions. Moreover, the regrown n++-GaN layer has no hetero-barrier with the GaN layers of the AlxGa1-xN DA channel. These innovations led to MOCVD regrown linear ohmic contacts and a record-low contact resistance Rc ~6.5 {\Omega}-mm to the Al0.62Ga0.38N DA channel layer of a HEMT with AlN barrier layer.