Electronic Structure of CeRhIn$_{5}$: dHvA and Energy Band Calculations

(2) Department of Physics; (3) Los Alamos National Laboratory MST-10; (4) Los Alamos National Laboratory T-1); Astronomy; Charis Quay Huei Li (1); Donavan Hall (1); Eliza Miller-Ricci (1); E. Palm (1); J. L. Sarrao (3); J. M. Wills (4)

arxiv: cond-mat/0011395 · v1 · submitted 2000-11-22 · ❄️ cond-mat.str-el

Electronic Structure of CeRhIn₅: dHvA and Energy Band Calculations

Donavan Hall (1) , E. Palm (1) , T. Murphy (1) , S. Tozer (1) , Eliza Miller-Ricci (1) , Lydia Peabody (1) , Charis Quay Huei Li (1) , U. Alver (2)

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R. G. Goodrich (2) J. L. Sarrao (3) P.G. Pagliuso (3) J. M. Wills (4) Z. Fisk (1) ((1) National High Magnetic Field Laboratory (2) Department of Physics Astronomy (3) Los Alamos National Laboratory MST-10 (4) Los Alamos National Laboratory T-1)

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classification ❄️ cond-mat.str-el

keywords areasalongantiferromagneticappliedaxisbandcalculationscerhin

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The de Haas - van Alphen effect and energy band calculations are used to study angular dependent extremal areas and effective masses of the Fermi surface of the highly correlated antiferromagnetic material CeRhIn$_5$. The agreement between experiment and theory is reasonable for the areas measured with the field applied along the (100) axis of the tetragonal structure, but disagree in size for the areas observed for the field applied along the (001) axis where the antiferromagnetic spin alignment is occurring. Detailed comparisons between experiment and theory are given.

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Electronic Structure of CeRhIn₅: dHvA and Energy Band Calculations

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