Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

M. Adell (1) , V. Stanciu (2) , J. Kanski (1) , L. Ilver (1) , J. Sadowski (3 , 4) , J. Z. Domagala (4) , P. Svedlindh (2)

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F. Terki (5) C. Hernandez (5) S. Charar (5) ((1) Department of Experimental Physics Chalmers University of Technology Goteborg Sweden (2) Department of Engineering Sciences Uppsala University (3) MAX-lab Lund University (4) Institute of Physics Polish Academy of Sciences Warszawa Poland (5) Groupe d Etude des Semiconducteurs Universite Montpellier II France)

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classification ❄️ cond-mat.other

keywords annealingcappinggamnaspost-growthsituunderachievingadequate

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We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.

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Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

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