High-pressure transport properties of CeRu₂Ge₂
Reviewed by Pith T0 review T1 audit T2 compute T3 formal T4 kernel pith:Z23FEDTYrecord.jsonopen to challenge →
read the original abstract
The pressure-induced changes in the temperature-dependent thermopower S(T) and electrical resistivity \rho(T) of CeRu_2Ge_2 are described within the single-site Anderson model. The Ce-ions are treated as impurities and the coherent scattering on different Ce-sites is neglected. Changing the hybridisation \Gamma between the 4f-states and the conduction band accounts for the pressure effect. The transport coefficients are calculated in the non-crossing approximation above the phase boundary line. The theoretical S(T) and \rho(T) curves show many features of the experimental data. The seemingly complicated temperature dependence of S(T) and \rho(T), and their evolution as a function of pressure, is related to the crossovers between various fixed points of the model.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.