Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

H. Hori; K. Kindo; M. Hagiwara; S. Sonoda; S. Yoshii; T. Kashiwagi; T. Yamamoto; Y. Akasaka; Y. Yamamoto

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Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

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arxiv cond-mat/0604647 v1 pith:V2P65QPM submitted 2006-04-28 cond-mat.str-el

S. Yoshii , S. Sonoda , T. Yamamoto , T. Kashiwagi , M. Hagiwara , Y. Yamamoto , Y. Akasaka , K. Kindo

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H. Hori

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keywords filmferromagnetismmn-dopedhigh-tctemperatureaboveaccompaniedbelow

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A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high-Tc and the carrier transport in the Mn-doped GaN film.

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