Analysis of trap spectra in LEC and epitaxial GaAs

J. Vaitkus (1) , E.Gaubas (1) , V.Kazukauskas (1) , V.Rinkevicius (1) , J.Storasta (1) , R.Tomasiunas (1) K.M.Smith (2) , V.O'Shea (2) ((1) Institute of Materials Science , Applied Research & Semiconductor Physics Department

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Vilnius University Vilnius Lithuania (2) Department of Physics Astronomy Glasgow University Glasgow UK)

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classification ✦ hep-ex

keywords analysedepitaxialgaasinfluencetrapwereanalysiscrystal

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Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.

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Analysis of trap spectra in LEC and epitaxial GaAs

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