Reentrant spin-glass behavior in $TlFe_{2-x}Se_2$ with the $ThCr_2Si_2$-type structure

A. F. Wang; G. J. Ye; J. J. Ying; M. Zhang; P. Cheng; R. H. Liu; X. F. Wang; X. G. Luo; X. H. Chen; Y. J. Yan

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Reentrant spin-glass behavior in $TlFe_{2-x}Se_2$ with the $ThCr_2Si_2$-type structure

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arxiv 1012.2929 v1 pith:4Z4CA5SE submitted 2010-12-14 cond-mat.str-el

J. J. Ying , A. F. Wang , Z. J. Xiang , X. G. Luo , R. H. Liu , X. F. Wang , Y. J. Yan , M. Zhang

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G. J. Ye P. Cheng X. H. Chen

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keywords behaviortlfeantiferromagneticreentrantspin-glassstrongactivationcandidate

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abstract

We investigated the physical properties of $TlFe_{2-x}Se_2$ single crystals. The resistivity of $TlFe_{2-x}Se_2$ shows typical semiconductor behavior with an activation energy of 25 meV. DC susceptibility indicates an antiferromagnetic transition at about 450 K. Reentrant spin-glass (RSG) behavior was found at about 130 K through DC and AC magnetic measurements. The RSG behavior suggests the existence of a strong competition between ferromagnetic (FM) and antiferromagnetic (AFM) interactions due to Fe deficiencies. Strong electron-electron correlation may exist in this material and it is possibly a candidate of parent compound for high $T_c$ superconductors.

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