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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

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arxiv 1807.09553 v1 pith:N6I62YTS submitted 2018-07-25 physics.ins-det

John Anders , Mathieu Benoit , Saverio Braccini , Raimon Casanova , Hucheng Chen , Kai Chen , Francesco Armando di Bello , Armin Fehr
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Didier Ferrere Dean Forshaw Tobias Golling Sergio Gonzalez-Sevilla Giuseppe Iacobucci Moritz Kiehn Francesco Lanni Hongbin Liu Lingxin Meng Claudia Merlassino Antonio Miucci Marzio Nessi Ivan Perić Marco Rimoldi D M S Sultan Mateus Vincente Barreto Pinto Eva Vilella Michele Weber Weihao Wu Lailin Xu Ettore Zaffaroni
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classification physics.ins-det
keywords protoncharacterisationchargecmoscollectioncurrentirradiationtechnique
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This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

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