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Quantization of fractional corner charge in $C_n$-symmetric higher-order topological crystalline insulators

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arxiv 1809.02142 v3 pith:BNC2EQBC submitted 2018-09-06 cond-mat.str-el

classification cond-mat.str-el
keywords chargecrystallineinsulatorstopologicalchargesfractionalnumberanomaly
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abstract

In the presence of crystalline symmetries, certain topological insulators present a filling anomaly: a mismatch between the number of electrons in an energy band and the number of electrons required for charge neutrality. In this paper, we show that a filling anomaly can arise when corners are introduced in $C_n$-symmetric crystalline insulators with vanishing polarization, having as consequence the existence of corner-localized charges quantized in multiples of $\frac{e}{n}$. We characterize the existence of this charge systematically and build topological indices that relate the symmetry representations of the occupied energy bands of a crystal to the quanta of fractional charge robustly localized at its corners. When an additional chiral symmetry is present, $\frac{e}{2}$ corner charges are accompanied by zero-energy corner-localized states. We show the application of our indices in a number of atomic and fragile topological insulators and discuss the role of fractional charges bound to disclinations as bulk probes for these crystalline phases.

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  1. Higher-order topological phase without crystalline symmetry

    cond-mat.str-el 2019-08 conditional novelty 7.0 of 10

    Subsystem symmetries can protect gapless hinges and corners in interacting 3D models, yielding higher-order topological phases that require no crystalline symmetry.

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