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Metal-insulator transition and dominant $d+id$ pairing symmetry in twisted bilayer graphene

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arxiv 1903.01701 v2 pith:3RXKB454 submitted 2019-03-05 cond-mat.str-el

classification cond-mat.str-el
keywords correlationbilayerconductivitygraphenemetal-insulatorpairingtransitiontwisted
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abstract

Motivated by recent experimental studies that have found signatures of a correlated insulator phase and tuning superconductivity in twisted bilayer graphene, we study the temperature-dependent conductivity, the spin correlation and the superconducting pairing correlation within a two-orbital Hubbard model on an emergent honeycomb lattice. The evaluation of the temperature dependence of the conductivity demonstrates that there is a metal-insulator transition, and the Mott phase at strong coupling is accompanied by antiferromagnetic order. The electronic correlation drives a $d+id$ superconducting pairing to be dominant over a wide filling region. All of the dc conductivity, the spin correlation and the superconductivity are suppressed as the interlayer coupling strength increases, and the critical $U_c$ for the metal-insulator transition is also reduced. Our intensive numerical results reveal that twisted bilayer graphene should be a uniquely tunable platform for exploring strongly correlated phenomena.

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Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. High-$T_\textrm{C}$ Superconductivity Originating from Interlayer Coulomb Coupling in Gate-Charged Twisted Bilayer Graphene Moir$\'{e}$ Superlattices

    cond-mat.supr-con 2019-08 reject novelty 4.0 of 10

    Using a fitted universal constant from earlier work, the authors calculate twisted-bilayer-graphene transition temperatures of 1.94 K and 3.02 K and claim agreement with mean-field fits to published resistance data.

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