Paper Citation Record · LEDGER

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm

As of 16 August 2026, this Paper Citation Record lists 16 of 16 outbound references and 0 inbound Pith citation observations for arXiv:1908.05853.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.05853 v1

Coverage vector

measured 16 of 16 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T13:06:48.548620Z

measured 16 of 16 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

16 of 16 outbound references displayed

verified exact3
verified fuzzy1
unresolved3
parse uncertain0
malformed identifier0
metadata mismatch9

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation a0e4ba33-036e-4b37-9f86-953006687f7a · outbound

This paper cites Meneghini, G.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Meneghini, G

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-14T13:06:49.429303Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 311ca88b-7c02-4314-8e52-8bf0e4cc30a5 · outbound

This paper cites Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon- Doped Buffer,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon- Doped Buffer,

Reference 2

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:49.415811Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 1621cecc-36e2-4d5d-9d58-45a0fff54f15 · outbound

This paper cites 7.6 V Threshold Voltage High-Performance Normally-Off Al 2 O 3 /GaN MOSFET Achieved by Interface Charge Engineering,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm 7.6 V Threshold Voltage High-Performance Normally-Off Al 2 O 3 /GaN MOSFET Achieved by Interface Charge Engineering,

Reference 3

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:49.356112Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation ac7cb0a2-e11f-4832-848a-c31c80b73824 · outbound

This paper cites 600-V Normally Off SiNx AlGaN/GaN MIS- HEMT With Large Gate Swing and Low Current Collapse,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm 600-V Normally Off SiNx AlGaN/GaN MIS- HEMT With Large Gate Swing and Low Current Collapse,

Reference 4

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:49.286744Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 137722f8-7439-42a4-9bfb-500e3f4006ee · outbound

This paper cites AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications,

Reference 5

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:49.229123Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 7528c81e-c1c1-403f-89df-1e59826a22b4 · outbound

This paper cites Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate,

Reference 6

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:49.156822Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 01e05eda-d6b1-4fd3-b4c3-60e5f442fddb · outbound

This paper cites A Normally-off AlGaN/GaN Transistor with RonA=2.6m&#x003A9;cm2 and BVds=640V Using Conductivity Modulation,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm A Normally-off AlGaN/GaN Transistor with RonA=2.6m&#x003A9;cm2 and BVds=640V Using Conductivity Modulation,

Reference 7

Resolution: unresolved; no resolver link, observed 2026-08-14T13:06:48.515433Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 249e44d8-34c2-46ec-b466-8b51d6d3a1cf · outbound

This paper cites 1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm 1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device,

Reference 8

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:49.035952Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 53465ae8-7268-4af6-b430-9f4d8fc018aa · outbound

This paper cites Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P- Type GaN Cap Layer,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P- Type GaN Cap Layer,

Reference 9

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:48.976802Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 00fa0c66-c528-4356-a9ae-1f23e5e9fb07 · outbound

This paper cites 6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm 6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack,

Reference 10

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:48.914322Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation fa70a83f-d2ce-4da2-8434-eaabc4335c2c · outbound

This paper cites Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga 1– x N/GaN High Electron Mobility Transistor Structures on Si (111),.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga 1– x N/GaN High Electron Mobility Transistor Structures on Si (111),

Reference 11

Resolution: verified exact; doi, observed 2026-08-14T13:06:48.606304Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 8768da81-0368-4b2b-b66b-2ef1ca0c7bd9 · outbound

This paper cites Interface charge engineering for enhancement-mode GaN MISHEMTs,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Interface charge engineering for enhancement-mode GaN MISHEMTs,

Reference 12

Resolution: metadata mismatch; raw_fallback, observed 2026-08-14T13:06:48.854614Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 8a37c2bd-0f46-432e-bb69-8de04187800e · outbound

This paper cites Interface traps at Al 2 O 3 / InAlN / GaN MOS- HEMT -on- 200 mm Si,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Interface traps at Al 2 O 3 / InAlN / GaN MOS- HEMT -on- 200 mm Si,

Reference 13

Resolution: verified exact; doi, observed 2026-08-14T13:06:48.594798Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 336d1d05-b2ae-4cf8-949b-786d71f137d2 · outbound

This paper cites Investigation of Ta₂O₅ as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Investigation of Ta₂O₅ as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si,

Reference 14

Resolution: unresolved; no resolver link, observed 2026-08-14T13:06:48.541555Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation da9c0f70-c96a-4aee-a354-4819841072c5 · outbound

This paper cites Study on leakage current of pn diode on GaN substrate at reverse bias,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Study on leakage current of pn diode on GaN substrate at reverse bias,

Reference 15

Resolution: verified exact; doi, observed 2026-08-14T13:06:48.583204Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

Observation 7f70b807-f873-42e0-aecf-344a93f3e853 · outbound

This paper cites Robust SiN/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer,.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm Robust SiN/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer,

Reference 16

Resolution: unresolved; no resolver link, observed 2026-08-14T13:06:48.548620Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Pith citing papers

No inbound Pith citation observations are available.