REVIEW 1 cited by
Bandwidth-tuning from insulating Mott quantum spin liquid to Fermi liquid via chemical substitution in $\kappa$-[(BEDT-TTF)$_{1-x}$(BEDT-STF)$_x$]$_2$Cu$_2$(CN)$_3$
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
read the original abstract
The electronic properties of molecular conductors can be readily varied via physical or chemical pressure as it increases the bandwidth W; this enables crossing the Mott insulator-to-metal phase transition by reducing electronic correlations U/W. Here we introduce an alternative path by increasing the molecular orbitals when partially replacing sulfur by selenium in the constituting bis-(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) molecules of the title compound. We characterize the tuning of the insulating quantum spin liquid state via a Mott transition to the metallic Fermi-liquid state by transport, dielectric, and optical measurements. At this first-order phase transition, metallic regions coexist in the insulating matrix leading to pronounced percolative effects most obvious in a strong enhancement of the dielectric constant at low temperatures.
Forward citations
Cited by 1 Pith paper
-
Universal relation between residual resistivity and A coefficient in correlated metals
Residual resistivity in correlated metals contains a term proportional to the Fermi-liquid A coefficient: rho0 = rho00 + (3/4 pi^2) A sigma_mu^2, where sigma_mu is the variance of local chemical-potential fluctuations.
Discussion (0). Sign in to comment.