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Opportunities and Challenges in MOCVD of \beta-Ga2O3 for Power Electronic Devices

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arxiv 2009.01117 v1 pith:LDDF477L submitted 2020-09-02 physics.app-ph

M.A. Mastro , J.K. Hite , C.R. Eddy , Jr. , M.J. Tadjer , S.J. Pearton , F. Ren , J. Kim This is my paper · ORCID
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keywords beta-ga2o3challengesdeviceselectronicmocvdpowerapproachesarticle
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Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

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