Electrically tunable detector of THz-frequency signals based on an antiferromagnet

A concept of an electrically tunable resonance detector of THz-frequency signals based on antiferromagnetic/heavy metal (AFM/HM) hetero-structure is proposed. The conversion of a THz-frequency input signal into DC voltage is done using the inverse spin Hall effect in an (AFM/HM) bilayer. An additional bias DC current in the HM layer can be used to vary the effective anisotropy of the AFM, and, therefore, to tune the AFMR frequency. The proposed AFM/HM hetero-structure works as a resonance-type quadratic detector which can be tuned by the bias current in the range of at least 10 percent of the AFMR frequency and our estimations show that the sensitivity of this detector could be comparable to that of modern detectors based on the Schottky, Gunn or graphene-based diodes.