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Enhancement in optically induced ultrafast THz response of MoSe2MoS2 heterobilayer

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arxiv 2012.10096 v1 pith:GHT5KVHF submitted 2020-12-18 physics.app-ph

Sunil Kumar , Arvind Singh , Sandeep Kumar , Anand Nivedan , Marc Tondusson , Jerome Degert , Jean Oberle , Seok Joon Yun
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Young Hee Lee Eric Freysz
This is my paper · ORCID
classification physics.app-ph
keywords heterobilayermonolayersmose2mos2enhancementexcitedmos2opticallyreflectivity
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THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.

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