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Design of High-Quality Reflectors for Vertical Nanowire Lasers on Si

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arxiv 2103.16922 v1 pith:IGCSOJTN submitted 2021-03-31 physics.optics

classification physics.optics
keywords lasersimprovevertically-standingachievinggreatlyhigh-qualityinterfacelasing
verification ladder T0 review T1 audit T2 compute T3 formal
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Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analyzed. The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO2 or Si2N3 dielectric mask at the interface can only improve it to ~10%, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97%. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.

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