Paper Integrity Record · LEDGER
Influences of ALD Al₂O₃ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors
As of an unrecorded date, Pith completed 0 of 0 listed checks against arXiv:2109.04597. No listed check completed, so this record makes no findings claim.
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Observations
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