Paper Integrity Record · LEDGER
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
As of an unrecorded date, Pith completed 0 of 0 listed checks against arXiv:2206.07881. No listed check completed, so this record makes no findings claim.
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